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AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 175 C A5A:1500.14 A5A:1500.16 A5A:1500.18 A5A:1500.20 A5A:1500.22 1400 1600 1800 2000 2200
O
Max. VRSM , VR (V) Max. non-rep. peak reverse voltage TJ = 25 to 175OC 1500 1700 1900 2100 2300
TJ = -40 to 0OC 1400 1520 1710 1900 2090
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 175 -40 to 175 1280 125 2370 15.8 IFSM Max. Peak non-rep. surge current 16.5 kA 18.7 19.6 1240 I2t Max. I2t capability 1130 1750 1600 I2t1/2 Max. I2t1/2 capability F Mounting Force 17500 1550 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms Initial T J = 175 C, no voltage applied after surge.
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UNITS
O O
NOTES 180 half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 175 C, rated VRRM applied after surge. Initial T J = 175 C, no voltage applied after surge. Initial T J = 175 C, rated VRRM applied after surge.
O O O O
C C C
A
O
IF(RMS) Nom. RMS current
A
t = 8.3 ms O Initial T J = 175 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.65 --------30 --------255(9) TO-200AC MAX. UNITS 1.87 0.79 0.807 0.262 0.241 60 0.035 0.039 0.040 0.030 --O
TEST CONDITIONS Initial T J = 25 C, 50-60Hz half sine, Ipeak = 4021A. TJ = 175 O C Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 175 C. Max. rated VRRM
O O
V V mW mA
O O
C/W DC operation, double side C/W 180O sine wave, double side
C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. g(oz.) -----
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140 130
30
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C)
170 160 150 140 130
30
120 110 100
60 90 120 180
120 110 0 200 400 600
60 90 120 180
DC
90 0 500 1000 1500 2000 2500
*Rectangular waveform
800
1000
1200
1400
1600
*Sinusoidal waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W)
25000
30
Maximum Average Forward Power Loss
20000
30
20000
15000
15000
60
60
10000
90 120
10000
90 120
5000
180
5000
180 DC
0
*Sinusoidal waveform
0
500
1000
1500
2000
2500
0 0 500 1000 1500 2000 2500
*Rectangular waveform
Average Forward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Forward Voltage Drop
10000
0.1
Transient Thermal Impedance ZthJC
Transient Thermal Impedance ZthJC (C/W)
Instantaneous Forward Current (A)
1000
0.01
125C
100 0.5
25C
1.0
1.5
2.0
2.5
3.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1500.XX
TO-200AC
Fig. 7 - Outline Characteristics

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